2SD1616A 1a , 120v npn plastic-encapsulated transistor elektronische bauelemente 12-apr-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? power dissipation classification of h fe (1) product-rank 2SD1616A-l 2SD1616A-k 2SD1616A-u range 135~270 200~400 300~600 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 120 v collector to emitter voltage v ceo 60 v emitter to base voltage v ebo 6 v collector current - continuous i c 1 a collector power dissipation p c 750 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 120 - - v i c =10 a, i e =0 collector to emitter breakdown voltage v (br)ceo 60 - - v i c =2ma, i b =0 emitter to base br eakdown voltage v (br)ebo 6 - - v i e =10 a, i c =0 collector cut ? off current i cbo - - 0.1 a v cb =60v, i e =0 emitter cut ? off current i ebo - - 0.1 a v eb =6v, i c =0 dc current gain h fe (1) 135 - 600 v ce =2v, i c =100ma h fe (2) 81 - - v ce =2v, i c =1a collector to emitter sa turation voltage* v ce(sat) - - 0.3 v i c =1a, i b =50ma base to emitter sa turation voltage* v be(sat) - - 1.2 v i c =1a, i b =50ma base to emitter voltage* v be 0.6 - 0.7 v v ce =2v, i c =50ma transition frequency f t 100 - - mhz v ce =2v, i c =100ma collector output capacitance c ob - - 19 pf v cb =10v, i e =0, f=1mhz turn on time t on - 0.07 - s v cc =10v, i c =100ma, i b1 =-i b2 =10ma storage time t s - 0.95 - fall time t f - 0.07 - *pulse test: pw 350 s, 2%. QQ ? emitte r ? collector ? base to-92 ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76 a c e f d g h j b
2SD1616A 1a , 120v npn plastic-encapsulated transistor elektronische bauelemente 12-apr-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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